labarai

Fasahar yanke waya ta lu'u-lu'u kuma ana kiranta da fasahar yankewa mai haɗakarwa. Amfani da hanyar haɗa waya ta lantarki ko resin shine amfani da hanyar haɗa waya ta lu'u-lu'u da aka haɗa a saman waya ta ƙarfe, wayar lu'u-lu'u da ke aiki kai tsaye a saman sandar silicon ko ingot na silicon don samar da niƙa, don cimma tasirin yankewa. Yanke waya ta lu'u-lu'u yana da halaye na saurin yankewa da sauri, daidaiton yankewa mai yawa da ƙarancin asarar kayan aiki.

A halin yanzu, an amince da kasuwar lu'ulu'u guda ɗaya ta wafer ɗin silicon da aka yanke wa waya ta lu'ulu'u gaba ɗaya, amma kuma an ci karo da ita a cikin tsarin tallatawa, wanda daga cikinsu akwai farin velvet shine matsalar da ta fi yawa. Dangane da wannan, wannan takarda ta mayar da hankali kan yadda za a hana matsalar wayar lu'u-lu'u da aka yanke wa waya ta monocrystalline.

Tsarin tsaftacewa na wafer ɗin silicon mai siffar monocrystalline na yanke waya ta lu'u-lu'u shine a cire wafer ɗin silicon da aka yanke ta hanyar na'urar injin saw ɗin waya daga farantin resin, a cire zaren roba, sannan a tsaftace wafer ɗin silicon. Kayan aikin tsaftacewa galibi injin tsaftacewa ne (injin cirewa) da injin tsaftacewa. Babban tsarin tsaftacewa na injin tsaftacewa shine: ciyarwa-fesa-fesa-ultrasonic cleaning-degumming-water water washing-underfeeding. Babban tsarin tsaftacewa na injin tsaftacewa shine: ciyarwa-ruwa-ruwa-ruwa-ruwa-ruwa-ruwa-alkali-wanke-alkali-wanke-ruwa ...

Ka'idar yin lu'ulu'u mai lu'ulu'u ɗaya

Wafer ɗin silicon mai siffar monocrystalline shine halayyar tsatsa ta anisotropic na wafer ɗin silicon mai siffar monocrystalline. Ka'idar amsawar ita ce lissafin amsawar sinadarai mai zuwa:

Si + 2NaOH + H2O = Na2SiO3 + 2H2↑

A taƙaice, tsarin samar da suede shine: Maganin NaOH don bambancin saurin tsatsa na saman lu'ulu'u daban-daban, (100) saurin tsatsa na saman fiye da (111), don haka (100) zuwa wafer silicon monocrystalline bayan tsatsa na anisotropic, wanda daga ƙarshe ya samo asali a saman don (111) mazugi mai gefe huɗu, wato tsarin "pyramid" (kamar yadda aka nuna a hoto na 1). Bayan an samar da tsarin, lokacin da hasken ya faru da gangaren dala a wani kusurwa, hasken zai haskaka zuwa gangaren a wani kusurwa, yana samar da sha na biyu ko fiye, don haka rage hasken da ke kan saman wafer silicon, wato, tasirin tarkon haske (duba Hoto na 2). Mafi kyawun girma da daidaito na tsarin "pyramid", mafi kyawun tasirin tarko, da kuma ƙarancin fitar da saman wafer silicon.

Hoto na 1: Ilimin halittar wafer silicon monocrystalline bayan samar da alkali

Hoto na 2: Ka'idar tarkon haske na tsarin "pyramid"

Binciken farin lu'ulu'u guda ɗaya

Ta hanyar duba na'urar hangen nesa ta lantarki a kan farin wafer ɗin silicon, an gano cewa tsarin pyramid na farin wafer a yankin bai yi daidai ba, kuma saman ya yi kama da yana da wani Layer na ragowar "wax", yayin da tsarin pyramid na suede a cikin yankin fari na wannan wafer ɗin silicon ya fi kyau (duba Hoto na 3). Idan akwai ragowar a saman wafer ɗin silicon monocrystalline, saman zai sami yankin da ya rage girman tsarin "pyramid" da samar da daidaito kuma tasirin yankin na yau da kullun bai isa ba, wanda ke haifar da hasken saman velvet da ya rage ya fi yankin na yau da kullun, yankin da ke da babban haske idan aka kwatanta da yankin na yau da kullun a cikin gani da aka nuna a matsayin fari. Kamar yadda za a iya gani daga siffar rarrabawar yankin fari, ba siffar yau da kullun ko ta yau da kullun ba ne a babban yanki, amma a yankunan gida ne kawai. Ya kamata ya zama cewa gurɓatattun wurare a saman wafer ɗin silicon ba a tsaftace su ba, ko kuma yanayin saman wafer ɗin silicon ya faru ne sakamakon gurɓataccen abu na biyu.

Hoto na 3: Kwatanta bambance-bambancen tsarin yanki a cikin wafers ɗin silicon fari na velvet

Faɗin wafer ɗin silicon mai yanke waya ya fi santsi kuma lalacewar ta fi ƙanƙanta (kamar yadda aka nuna a Hoto na 4). Idan aka kwatanta da wafer ɗin silicon mai yanke waya, saurin amsawar alkali da wafer ɗin silicon mai yanke waya ya fi na wafer ɗin silicon mai yanke waya mai yanke waya jinkiri, don haka tasirin ragowar saman akan tasirin velvet ya fi bayyana.

Hoto na 4: (A) Ma'aunin saman ma'aunin murfin ... ma'aunin ma'aunin ma'aunin ma'aunin ma'aunin ma'aunin ma'aunin ma'aunin ma'aunin ma'aunin ma'aunin ma'aunin ma'aunin ma'aunin ma'aunin ma'aunin ma'aunin ma'aunin ma

Babban tushen ragowar saman wafer ɗin silicon da aka yanke da waya

(1) Mai sanyaya: manyan abubuwan da ke cikin na'urar sanyaya waya ta lu'u-lu'u sune surfactant, dispersant, defamagent da ruwa da sauran abubuwan haɗin. Ruwan yankewa mai kyau yana da kyakkyawan aiki, watsawa da sauƙin tsaftacewa. Masu surfactants galibi suna da kyawawan halaye na hydrophilic, wanda yake da sauƙin tsaftacewa a cikin tsarin tsaftace silicon wafer. Ci gaba da juyawa da zagayawa na waɗannan ƙarin abubuwa a cikin ruwa zai haifar da adadi mai yawa na kumfa, wanda ke haifar da raguwar kwararar sanyaya, yana shafar aikin sanyaya, da kuma matsalolin kwararar kumfa har ma da kumfa, wanda zai yi tasiri sosai ga amfani. Saboda haka, yawanci ana amfani da mai sanyaya tare da wakilin cirewa. Domin tabbatar da aikin cirewa, silicone da polyether na gargajiya galibi ba su da isasshen hydrophilic. Maganin narkewa a cikin ruwa yana da sauƙin sha kuma ya kasance a saman silicon wafer a cikin tsaftacewa ta gaba, wanda ke haifar da matsalar farin tabo. Kuma bai dace da manyan sassan sanyaya ba, Saboda haka, dole ne a sanya shi zuwa sassa biyu, An ƙara manyan sassan da masu cirewa a cikin ruwa, A cikin tsarin amfani, bisa ga yanayin kumfa, Ba za a iya sarrafa amfani da yawan magungunan hana kumfa ba a adadi, Zai iya ba da damar wuce gona da iri na magungunan hana kumfa cikin sauƙi, Yana haifar da ƙaruwa a cikin ragowar saman silicon wafer, Hakanan yana da wahalar aiki, Duk da haka, saboda ƙarancin farashin kayan masarufi da kayan aikin cirewa, Saboda haka, yawancin masu sanyaya gida duk suna amfani da wannan tsarin dabara; Wani mai sanyaya yana amfani da sabon wakilin cirewa, Zai iya dacewa da manyan sassan, Babu ƙari, Zai iya sarrafa adadinsa yadda ya kamata da adadi, Zai iya hana amfani da shi da yawa yadda ya kamata, Darussan kuma suna da matukar dacewa a yi, Tare da ingantaccen tsarin tsaftacewa, ana iya sarrafa ragowarsa zuwa ƙananan matakai, A Japan da wasu masana'antun gida suna ɗaukar wannan tsarin dabara, Duk da haka, saboda yawan farashin kayansa, fa'idar farashinsa ba a bayyane take ba.

(2) Sigar manne da resin: a matakin ƙarshe na aikin yanke waya ta lu'u-lu'u, an yanke wafer ɗin silicon kusa da ƙarshen da ke shigowa a gaba, Wafer ɗin silicon a ƙarshen fitarwa bai riga ya yanke ba tukuna, Wayar lu'u-lu'u da aka yanke ta farko ta fara yankewa zuwa layin roba da farantin resin, Tunda manne sandar silicon da allon resin duk samfuran resin epoxy ne, Matsayin laushinta shine tsakanin 55 zuwa 95℃, Idan wurin laushi na layin roba ko farantin resin ya yi ƙasa, yana iya zafi cikin sauƙi yayin aikin yankewa kuma ya sa ya yi laushi ya narke, An haɗa shi da wayar ƙarfe da saman wafer ɗin silicon, Yana haifar da raguwar ikon yanke layin lu'u-lu'u, Ko kuma an karɓi wafer ɗin silicon kuma an yi masa fenti da resin, Da zarar an haɗa shi, yana da matuƙar wahala a wanke shi, Irin wannan gurɓataccen abu galibi yana faruwa kusa da gefen wafer ɗin silicon.

(3) foda na silicon: A yayin yanke waya na lu'u-lu'u, zai samar da foda mai yawa na silicon, tare da yankewa, sinadarin foda mai sanyaya turmi zai yi yawa, idan foda ya yi girma sosai, zai manne da saman silicon, kuma yanke waya ta lu'u-lu'u na foda na silicon zai sa ya fi sauƙin sha a saman silicon, yana sa ya yi wahala a tsaftace shi. Saboda haka, tabbatar da sabuntawa da ingancin mai sanyaya kuma rage yawan foda a cikin mai sanyaya.

(4) maganin tsaftacewa: amfani da masana'antun yanke waya na lu'u-lu'u a yanzu galibi suna amfani da yanke turmi a lokaci guda, galibi suna amfani da wanke-wanke na yanke turmi, tsarin tsaftacewa da wakilin tsaftacewa, da sauransu, fasahar yanke waya ta lu'u-lu'u guda ɗaya daga tsarin yankewa, samar da cikakken saitin layi, sanyaya da yanke turmi suna da babban bambanci, don haka tsarin tsaftacewa mai dacewa, yawan maganin tsaftacewa, dabara, da sauransu ya kamata su kasance don yanke waya ta lu'u-lu'u don yin daidaitawa daidai. Maganin tsaftacewa muhimmin al'amari ne, asalin maganin tsaftacewar surfactant, alkalinity bai dace da tsaftace wafer ɗin yanke waya ta lu'u-lu'u ba, ya kamata ya kasance don saman wafer ɗin silicon na waya ta lu'u-lu'u, abun da ke ciki da ragowar saman wafer ɗin tsaftacewa da aka yi niyya, kuma a ɗauka tare da tsarin tsaftacewa. Kamar yadda aka ambata a sama, ba a buƙatar abun da ke cikin maganin cire turmi a cikin yanke turmi.

(5) Ruwa: yanke waya ta lu'u-lu'u, wankewa kafin lokaci da kuma tsaftace ruwan da ya kwarara ya ƙunshi ƙazanta, ana iya shanye shi a saman wafer ɗin silicon.

Rage matsalar sanya gashin velvet ya yi fari a bayyane shawarwari

(1) Don amfani da mai sanyaya mai kyau tare da watsawa mai kyau, kuma mai sanyaya yana buƙatar amfani da mai rage ragowar ragowar don rage ragowar abubuwan sanyaya a saman wafer ɗin silicon;

(2) Yi amfani da manne da farantin resin da ya dace don rage gurɓatar wafer ɗin silicon;

(3) An narkar da ruwan sanyaya da ruwa mai tsarki domin tabbatar da cewa babu wani datti da ya rage a cikin ruwan da aka yi amfani da shi;

(4) Don saman waya mai yanke silicon, yi amfani da aikin tsaftacewa da tasirin tsaftacewa mafi dacewa da wakili mai tsaftacewa;

(5) Yi amfani da tsarin dawo da ruwan lu'u-lu'u ta yanar gizo don rage yawan sinadarin silicon a cikin tsarin yankewa, don sarrafa ragowar foda silicon akan saman wafer ɗin silicon na wafer yadda ya kamata. A lokaci guda, yana iya ƙara inganta yanayin zafi, kwarara da lokaci a cikin wanka kafin a wanke, don tabbatar da cewa an wanke foda ɗin silicon akan lokaci

(6) Da zarar an sanya wafer ɗin silicon a kan teburin tsaftacewa, dole ne a yi masa magani nan take, sannan a bar wafer ɗin silicon ya jike a duk lokacin tsaftacewar.

(7) Wafer ɗin silicon yana sa saman ya jike yayin da ake cire gumin, kuma ba zai iya bushewa ta halitta ba. (8) A cikin tsarin tsaftacewa na wafer ɗin silicon, ana iya rage lokacin da aka fallasa a cikin iska gwargwadon iko don hana samar da fure a saman wafer ɗin silicon.

(9) Ma'aikatan tsaftacewa ba za su taɓa saman wafer ɗin silicon kai tsaye ba a duk lokacin tsaftacewa, kuma dole ne su sanya safar hannu ta roba, don kada su yi buga yatsa.

(10) A cikin bayanin [2], ƙarshen batirin yana amfani da tsarin tsaftacewa na hydrogen peroxide H2O2 + alkali NaOH bisa ga rabon girma na 1:26 (maganin NaOH 3%), wanda zai iya rage faruwar matsalar yadda ya kamata. Ka'idarsa ta yi kama da maganin tsaftacewa na SC1 (wanda aka fi sani da ruwa 1) na wafer silicon semiconductor. Babban tsarinsa: fim ɗin oxidation akan saman wafer silicon yana samuwa ta hanyar oxidation na H2O2, wanda NaOH ya lalata, kuma oxidation da tsatsa suna faruwa akai-akai. Saboda haka, ƙwayoyin da aka haɗa da foda silicon, resin, ƙarfe, da sauransu) suma suna faɗuwa cikin ruwan tsaftacewa tare da layin tsatsa; saboda oxidation na H2O2, kwayoyin halitta akan saman wafer suna rugujewa zuwa CO2, H2O kuma an cire su. Wannan tsari na tsaftacewa ya kasance masana'antun wafer silicon suna amfani da wannan tsari don sarrafa tsaftacewa na wafer silicon monocrystalline, wafer silicon a cikin gida da Taiwan da sauran masana'antun baturi amfani da rukuni na velvet fari koke-koke na matsala. Akwai kuma masana'antun batir da suka yi amfani da irin wannan tsarin tsaftacewar velvet kafin amfani da velvet, kuma suna sarrafa bayyanar farin velvet yadda ya kamata. Za a iya ganin cewa an ƙara wannan tsarin tsaftacewa a cikin tsarin tsaftacewar silicon wafer don cire ragowar silicon wafer don magance matsalar farin gashi a ƙarshen batirin yadda ya kamata.

ƙarshe

A halin yanzu, yanke waya ta lu'u-lu'u ya zama babbar fasahar sarrafawa a fannin yanke lu'u-lu'u ɗaya, amma a cikin tsarin haɓaka matsalar yin farin velvet yana damun wafer silicon da masana'antun batir, wanda ya sa masana'antun batir suka fara nuna cewa wafer silicon yana da ɗan juriya. Ta hanyar nazarin kwatancen yankin fari, galibi yana faruwa ne sakamakon ragowar da ke saman wafer silicon. Domin a hana matsalar wafer silicon a cikin tantanin halitta, wannan takarda tana nazarin hanyoyin da za a iya samun gurɓataccen saman wafer silicon, da kuma shawarwari da matakan ingantawa a samarwa. Dangane da adadi, yanki da siffar fararen tabo, ana iya bincika da inganta musabbabin. Ana ba da shawarar musamman a yi amfani da tsarin tsaftacewa na hydrogen peroxide + alkali. Gwaninta mai nasara ta tabbatar da cewa zai iya hana matsalar wafer silicon silicon da ke yanke waya ta lu'u-lu'u yin farin velvet, don ambaton masana'antu da masana'antun gabaɗaya.